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MARC 21

Semiconductors and semimetals
Tag	Description
022	$a0080-8784
082	$a621.315
099	$aLibrary storage
245	$aSemiconductors and semimetals$hS
260	$aSan Diego, CA$bAcademic Press$c1966-
505	$tApplications and devices part. A (vol. 7)$tApplications and devices part. B (vol. 7)$tApplications of multiquantum wells, selective doping, and superlattices (vol. 24)$tCadmiun telluride ( vol. 13)$tChemical mechanical polishing in silicon processing (vol. 63)$tContacts, junctions, emitters (vol. 15)$tCW beam processing of silicon and other semiconductors$tDefects, (HgCd)Se, (HgCd)Te (vol. 16)$tDiluted magnetic semiconductors ( vol. 25)$tDrrp levels, GaAs, alloys, photochemistry (vol.19)$tEffect of disorder and defects in ion-implanted semiconductors: electrical and physicochemical characterization (vol. 45)$tEffect of disorder and defects in ion-implanted semiconductors: optical and photothermal characterization (vol. 46)$tElectroluminescence I (vol. 64)$tElectroluminescence II (vol. 65)$tEpitaxial microstructures (vol. 40)$tGallium nitride (GaN) I (vol. 50)$tGallium nitride (GaN) II (vol. 57)$tGermanium silicon: physics and materials (vol. 56)$tHigh brightness light emitting diodes (vol. 48)$tHigh pressure in semiconductor physics I (vol. 54)$tHigh pressure in semiconductor physics II (vol. 55)$tHigh speed heterostructure devices (vol. 41)$tHighly conducting quasi-one-dimensional organic crystals (vol. 27)$tHydrogen in semiconductors II$tHydrogen in semiconductors (vol. 34)$tHydrogenated amorphous silicon, Part. A Preparation and structure (vol. 21)$tHydrogenated amorphous silicon, Part. B Optical properties (vol. 21 B)$tHydrogenated amorphous silicon, Part. C Electronic and transport proporties$tHydrogenated amorphous silicon Part. D, Device applications (vol. 21 D)$tIdentification on defects in semiconductors\\ abc\ (vol.51A)$tIdentification on defects in semiconductors (vol.51B)$tII-VI blue/green light emitters : device physics and epitaxial growth (vol. 44)$tIII-V compound semiconductors and semiconductor properties of superionic materials (vol. 26)$tImperfections in III/V materials (vol. 38)$tIndium phosphide: crystal growth and characterization (vol. 31)$tInfrared detectors ( vol. 5)$tInfrared detectors II (vol. 12)$tInjection phenomena (vol. 6)$tIntersubband transitions in quantum wells: physics and device applications I (vol. 62)$tIntersubband transitions in quantum wells: physics and device applications II (vol. 66)$tIsotope effects in solid state physics (vol. 68)$tLaser crystallization of silicon (vol. 75)$tLasers, junctions, transport (vol. 14)$tLight emission in silicon from physics to devices (vol. 49)$tLightwave communications technology Part.B, Semiconductor injection lasers, I (vol. 22 Part. B)$tLightwave communications technology Part.C Semiconductor injection lasers, II light-emmitting diodes (vol. 22 part.C)$tLightwave communications technology Part.D Photodetectors (vol.22 Part.D)$tLightwave communications technology Part.E Integrated optoelectronics (Vol. 22 Part. E)$tLightwave communications thecnology Part. A, Material growth thecnologies (vol. 22 Part.A)$tMeasurement of High-speed signals in solid state devices (vol. 28)$tThe mechanical properties of semiconductors (vol.37)$tMercury cadmium telluride (vol. 18)$tMinority carriers in III-V semiconductors: physics and applications (vol. 39)$tModulation techniques (vol. 9)$tNanostructures systems (vol. 35)$tNonlinear optics in semiconductor I (vol. 58)$tNonlinear optics in semiconductors II (vol. 59)$tOptical properties of III-V compounds (vol. 3)$tOxygen in silicon (vol. 42)$tPhysics of III-V Compounds (vol. 1)$tPhysics of III-V Compounds (vol. 2)$tPhysics of III-V Compounds (vol. 4)$tProcessing and properties of compound semiconductors (vol. 73)$tPulsed laser processing of semiconductors (vol. 23)$tRecent trends in thermoelectric materials research I (vol. 69)$tRecent trends in thermoelectric materials research II (vol. 70)$tRecent trends in thermoelectric materials research III (vol. 71)$tSelf-assembled InGaAs/GaAs quantum dots$tSemi-insulating GaAs (vol. 20)$tSemiconducting chalcogenide glass I: glass formation, structure, and stimulated transformations in chalcogenide glasses (vol. 78)$tSemiconductors for room temperature nuclear detector applications (vol. 43)$tSiC materials and devices (vol. 52)$tSilicon epitaxy (vol. 72)$tSilicon-germanium strained layers and heterostructures (vol. 74)$tSolar cells (vol. 11)$tThe spectroscopy of semiconductors (vol. 36)$tStrained-layer superlattices: materials science and technology (vol. 33)$tStrained-layer superlattices: physics (vol. 32)$tThin-film diamond I (vol.76)$tThin-film diamond II (vol. 77)$tTransport and optical phenomena (vol. 8)$tTransport phenomena ( vol. 10)$tUltrafast physical processes in semiconductors (vol. 67)$tUncooled infrared imaging arrays and systems (vol. 47)$tVery high speed integrated circuits: gallium arsenide LSI (vol. 29)$tVery high speed integrated circuits: heterostructure (vol. 30)
700	$aWeber, Eicke R.
700	$aBeer, Albert C.
700	$aWillardson, Robert K.
905	$aCondensed matter sector
925	$a1 (1966) - 78 (2004) Library storage